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Field Array Pulse Injector: Difference between revisions
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| content = Quantum Emergence | |||
| byline = A guide to <i><b><big>alienesque UAP physics</big></b></i> for humans ''(with pictures!)'' | |||
| series = 100 | |||
| page = cover.front | |||
}} | |||
{{HeaderFieldArray}} | |||
=== NanoBolt Field Array Driver === | === NanoBolt Field Array Driver === |
Revision as of 11:07, 30 September 2023
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NanoBolt Field Array Driver

In the Field Array prototype designs, transistor Q1 in Schematic 1 is replaced with quantum-enhanced FET technology (eGaN) by EPC (EPC2022).
To best appreciate the switching speed of the eGaN, the circuit must be optimized to minimum inductance. The design facilitates optimized low-inductance for higher frequency operation of the switches when configured in a Resonant-X configuration (prototype chaotic power-logic-ring oscillator), by embedding the adaptor board of Illus. 1 within a solid copper conductor of sufficient diameter to allow a hollow center for connecting the circuit to the power stud, and receiving B0 current. Also on the body of the stud is a connector receiving the switching signal, which routes to the eGaN gate through the adaptor.
Please standby for further open-sourced development. XenoEngineer —research and development by a talking simian 10:53, 30 September 2023 (UTC)