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Field Array Pulse Injector

From Catcliffe Development
Revision as of 11:07, 30 September 2023 by XenoEngineer (talk | contribs)
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NanoBolt Field Array Driver

Schematic 1. The basic principle of NMR resonance is to create a background magnetic flux in copper resonator element with a steady direct electrical current (D.C.) into a resonator (load) element. A fast blocking diode (D1) allows a higher voltage pulse 'injected' into the load circuit connected at J3, between the blocking diode and the resonator element. In NMR jargon, J1 signal injects a B1 pulse-train over the B0 nuclear spin precessing flux created by current through J2.
EPC2022 to TO-220 footprint adaptor.jpg

In the Field Array prototype designs, transistor Q1 in Schematic 1 is replaced with quantum-enhanced FET technology (eGaN) by EPC (EPC2022).

To best appreciate the switching speed of the eGaN, the circuit must be optimized to minimum inductance. The design facilitates optimized low-inductance for higher frequency operation of the switches when configured in a Resonant-X configuration (prototype chaotic power-logic-ring oscillator), by embedding the adaptor board of Illus. 1 within a solid copper conductor of sufficient diameter to allow a hollow center for connecting the circuit to the power stud, and receiving B0 current. Also on the body of the stud is a connector receiving the switching signal, which routes to the eGaN gate through the adaptor.

Please standby for further open-sourced development. XenoEngineer —research and development by a talking simian 10:53, 30 September 2023 (UTC)

Note: The eGaN drain connection (D on the top side) is plated-through to become the ground-plane of the back-side of the adaptor circuit.

Note: 1 qty EPC2022 eGaN and two SMD resistors are required to complete this adaptor circuit.

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